FDMS86104 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* Shielded Gate MOSFET Technology
* Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A
* Max rDS(on) = 39 mΩ at VGS = 6 V, ID = 5.5 A
* Advanced Package and Sil.

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. .

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